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| 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389 1st. Edition Application UHF / VHF RF amplifier Features * Low noise figure. NF = 1.0 dB typ. at f = 200 MHz * Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK297 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 8 8 25 150 150 -55 to +150 Unit V V V mA mW C C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2 3SK297 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Symbol V(BR)DSX V(BR)G1SS V(BR) G2SS I G1SS I G2SS I DS(on) Min 12 8 8 -- -- 0.5 0 0 16 2.4 0.8 -- 22 -- 12 -- -- Typ -- -- -- -- -- -- -- -- 20 2.9 1.0 0.023 25 1.0 15 3.2 2.8 Max -- -- -- 100 100 10 +1.0 +1.0 -- 3.4 1.4 0.04 -- 1.8 -- 4.5 3.5 Unit V V V nA nA mA V V mS pF pF pF dB dB dB dB dB VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 60 MHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 900 MHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 200 MHz Test conditions I D = 200 A , VG1S = -3 V, VG2S = -3 V I G1 = 10 A, VG2S = VDS = 0 I G2 = 10 A, VG1S = VDS = 0 VG1S = 6 V, VG2S = VDS = 0 VG2S = 6 V, VG1S = VDS = 0 VDS = 6 V, VG1S = 0.75V, VG2S = 3 V VDS = 10 V, VG2S = 3V, I D = 100 A VDS = 10 V, VG1S = 3V, I D = 100 A VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure Noise figure Note: Marking is "ZP-" |yfs| Ciss Coss Crss PG NF PG NF NF 3 3SK297 Maximum Channel Power Dissipation Curve Pch (mW) 200 20 Typical Output Characteristics VG2S = 3 V I D (mA) 16 1.4 V Pulse test 1.2 V 150 Channel Power Dissipation 12 1.0 V 100 Drain current 8 0.8 V 0.6 V VG1S = 0.4 V 50 4 0 50 100 150 200 Ambient Temperature Ta (C) 0 2 4 6 8 10 Drain to source voltage VDS (V) Drain Current vs. Gate1 to Source Voltage 20 3.0 V I D (mA) 16 2.5 V 2.0 V 1.5 V V DS = 6 V Pulse test Drain Current vs. Gate2 to Source Voltage 20 3.0 V Drain current I D (mA) 16 2.0 V 2.5 V 1.5 V 1.0 V V DS = 6 V Pulse test 12 1.0 V 12 Drain current 8 8 4 VG2S = 0.5 V 0 1 2 3 4 5 4 VG1S = 0.5 V 1 2 3 4 5 0 Gate1 to source voltage VG1S (V) Gate2 to source voltage VG2S (V) 4 3SK297 Forward Transfer Admittance vs. Gate1 to Source Voltage Forward transfer admittance |y fs | (mS) 30 VDS = 6 V f = 1 kHz V G2S = 3.0 V 2.5 V 2.0 V 1.5 V 6 1.0 V 0.5 V 0 0.4 0.8 1.2 1.6 2.0 Power gain 30 PG (dB) Power Gain vs. Drain Current 24 24 18 18 12 12 VDS = 6 V VG2S = 3 V f = 200 MHz 2 Drain current 5 10 I D (mA) 20 6 0 1 Gate1 to source voltage VG1S (V) Noise Figure vs. Drain Current 3.0 NF (dB) VDS = 6 V VG2S = 3 V f = 200 MHz 30 PG (dB) Power gain Power Gain vs. Drain to Source Voltage 2.4 24 Noise figure 1.8 18 1.2 12 VG2S = 3 V I D = 10 mA f = 200 MHz 2 4 6 8 VDS 10 (V) 0.6 0 1 6 2 5 10 I D (mA) 20 0 Drain current Drain to source voltage 5 3SK297 Noise Figure vs. Drain to Source Voltage 2.0 NF (dB) PG (dB) 20 Power Gain vs. Drain Current 1.6 16 Noise figure 1.2 Power gain 12 0.8 VG2S = 3 V I D = 10 mA f = 200 MHz 2 4 6 8 VDS 10 (V) 8 VDS = 6 V VG2S = 3 V f = 900 MHz 2 5 10 I D (mA) 20 0.4 4 0 1 0 Drain to source voltage Drain current Noise Figure vs. Drain Current 10 NF (dB) VDS = 6 V VG2S = 3 V f = 900 MHz 20 PG (dB) Power gain Power Gain vs. Drain to Source Voltage 8 16 Noise figure 6 12 4 8 VG2S = 3 V I D = 10 mA f = 900 MHz 2 4 6 8 10 2 0 1 4 2 5 10 I D (mA) 20 0 Drain current Drain to source voltage VDS (V) 6 3SK297 Noise Figure vs. Drain to Source Voltage 5 NF (dB) Noise figure 4 3 2 VG2S = 3 V I D = 10 mA f = 900 MHz 2 4 6 8 10 1 0 Drain to source voltage VDS (V) 7 3SK297 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 0.5 / div. 60 -150 -30 Condition: V DS = 6 V , V G2S = 3 V I D = 10 mA , Zo = 50 50 to 1000 MHz (50 MHz step) Condition: V DS = 6 V , V G2S = 3 V I D = 10 mA , Zo = 50 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.002 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 -3 Condition: V DS = 6 V , V G2S = 3 V I D = 10 mA , Zo = 50 50 to 1000 MHz (50 MHz step) Condition: V DS = 6 V , V G2S = 3 V I D = 10 mA , Zo = 50 50 to 1000 MHz (50 MHz step) 8 3SK297 S Parameter (VDS = 6 V, VG2S = 3 V, ID = 10 mA, ZO = 50 ) Freq. (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 MAG. 0.994 0.993 0.986 0.980 0.973 0.950 0.936 0.924 0.912 0.893 0.874 0.859 0.846 0.829 0.810 0.802 0.791 0.778 0.756 0.751 ANG. -5.8 -11.0 -16.8 -22.5 -27.8 -33.0 -38.3 -43.4 -48.0 -52.5 -57.3 -62.0 -66.1 -69.8 -74.2 -78.0 -81.6 -84.6 -88.5 -92.2 S21 MAG. 2.04 2.02 2.00 1.98 1.94 1.90 1.86 1.83 1.77 1.71 1.67 1.64 1.58 1.50 1.46 1.44 1.38 1.34 1.30 1.26 ANG. 173.6 167.4 161.5 155.5 149.6 142.6 137.1 131.6 126.8 121.0 115.5 111.1 106.7 102.1 97.1 92.7 88.9 84.2 80.2 75.9 S12 MAG. 0.00116 0.00132 0.00229 0.00313 0.00427 0.00473 0.00536 0.00561 0.00562 0.00640 0.00638 0.00647 0.00667 0.00694 0.00661 0.00618 0.00622 0.00615 0.00576 0.00562 ANG. 76.9 85.7 78.2 73.5 68.7 63.9 64.3 64.5 60.9 53.5 49.3 49.0 50.2 49.3 46.6 43.7 44.7 43.6 45.1 40.7 S22 MAG. 0.993 0.993 0.991 0.990 0.987 0.985 0.982 0.979 0.975 0.971 0.967 0.964 0.960 0.955 0.952 0.948 0.944 0.940 0.935 0.932 ANG. -2.2 -4.5 -6.4 -8.5 -10.5 -12.5 -14.4 -16.2 -18.2 -20.2 -22.0 -23.9 -25.8 -27.6 -29.4 -31.2 -33.2 -35.1 -36.8 -38.5 9 Unit: mm 2.95 0.2 1.9 0.2 0.95 0.95 0.4 - 0.05 + 0.1 0.4 - 0.05 + 0.1 0.65 0.16 - 0.06 + 0.1 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.85 1.8 0.2 0.3 1.1 - 0.1 + 0.2 0.65 0.4 - 0.05 + 0.1 0.1 0.6 + 0.05 - 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK-4 -- Conforms 0.013 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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